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AIKO Cells
AIKO
ABC
All Back Contact Cell
Aesthetics|High efficiency|High reliability|High power output per watt
AIKO
PERC
Bifacial Mono PERC Cell
High efficiency|High reliability|High power yield|“Bifacial, metrology, and classification” technology
Cell
All Back Contact Cell
ABC
Product Image

Aesthetics|High efficiency|High reliability|High power output per watt

Features

  • Full area illuminated
  • All c-Si atoms electricity-producible technology
  • All back electrode technology
  • All back passivating contact technology
  • Totally Ag-free metallization technology
  • Whole Life-cycle hot-spot risk control and Power generation guarantee technology

Description

Tackling N-type technical barriers, fully independent propertyrights

Relying on the first star product developed by Lianchuang Center, AIKO self-developed core equipment and mass production process, which has completely independent intellectual property rights.

Silver-free metallization historic technological breakthrough

ABC silver-free technology guarantees power generation, while it can greatly reduce the problem of broken grid of crystalline silicon cells, it can also avoid affecting the life of components due to the life of silver wires.

Revolutionary N-type full back contact battery product

There is no metal grid on the front, 100% sunlight is received, and it has excellent light decay resistance performance and mechanical load performance; Low temperature coefficient, higher temperature resistance, high efficiency and high appearance.

New intelligent manufacturing factory in Zhuhai

In Q4 of 2022, 6.5GW will be put into operation in AIKO Zhuhai Base, the Zhuhai base covers an area of ??about 1,100 mu, with a designed production capacity of 26GW. In Q3 of 2023, 10GW of ABC cell and module production capacity will be formed.

Broad prospects for technological development

In the future, ABC can be combined with perovskite, copper indium gallium selenide, cadmium Telluride, thin-film solar cells and other technologies superimposed.

Cell
Bifacial Mono PERC Cell
PERC
Product Image

High efficiency|High reliability|High power yield|“Bifacial, metrology, and classification” technology

Size

  • 182mm×182mm(diameter 247±0.5mm)
  • 210mm×210mm(diameter 295±0.25mm)
  • Thickness:160±20μm

Features

182mm 10BB Bifacial Mono PERC Cell

  • Front Side (?): Silicon oxide + blue silicon nitride compound anti-reflection coating (PID Free) ; The front side is a half-cut design; The busbar head is a large double fork, and the pads of the busbar are intermittently stepped. The size of the head pad is 1.2 ± 0.15mm * 1.3± 0.15mm, and the middle pad of the busbar size is 0.8±0.15mm*1 ± 0.15mm.
  • Back Side (+): Passivated layer (AlOx and SiNx) and Rear Contact (Al); the rear electrode is composed of 10 roots rear compound busbar and 160 roots rear Al fingers. The composite busbar is locally narrowed, and the width is 1.5 ± 0.3mm and 1.0 ± 0.3mm, respectively. 8 sections 1.45±0.3 mm silver anode, no laser pattern under the rear electrode. Silver electrode has round head, and silver electrode is 1.5±0.6mm hollow at both ends.

210mm 12BB Bifacial Mono PERC Cell

  • Front(-):Silicon dioxide + blue nitride composite anti-reflection film (PID free);Three-Segment design,12 roots bus bar and 120-180 roots fingers;The bus bar width is 0.06±0.02mm with three-Segment design, and the bus bar has two forks head (size (1.3±0.2)mm × (1.0±0.1) mm) ;the size of 4 padsat the junction of bus bar and the fingers is (1.2±0.2)mm × (0.5±0.2)mm.
  • Back(+):AlOX and SiNX dual layer and rear contact; the rear electrode is composed of 12 roots rear compound bus bar and 150-250 roots rear Al fingers,8 sections,1.4±0.3 mm silver anode.

210mm 9BB Bifacial Mono PERC Cell

  • Front(-): Silicon dioxide + blue nitride composite anti-reflection film (PID free);Three-Segment design,9 roots bus bar and 120-180 roots fingers; The bus bar width is 0.08±0.03mm with three-Segment design, and the bus bar has two forks head (size (1.5±0.1)mm × (1.2±0.1) mm) ; the size of 4 padsat the junction of bus bar and the fingers is (1.5±0.15)mm × (1.0±0.15)mm.
  • Back(+):AlOX and SiNX dual layer rear contact; the rear electrode is composed of 9 roots rear compound bus bar and 150-250 roots rear Al fingers,9 sections,1.8±0.2 mm silver anode.
Factory Address of AIKO

ZheJiang Aiko Solar Energy Technology Co., Ltd.

  • Add.: No. 655, Haopai Road, Suxi Town, Yiwu City, Zhejiang Province, 322009, CHINA

TianJin Aiko Solar Technology Co., Ltd.

  • Add.: No.73, Gaoxin Highway, Science and Technology Park, Beichen Economic and Technological Development Zone, Beichen District, Tianjin, 300400, CHINA

ChuZhou Aiko Solar Technology Co., Ltd.

  • Add.: North Main Gate, No.3 Chaoyang Avenue, Shitan Industrial Park, Shizi Town, Quanjiao County, Chuzhou City, Anhui Province, CHINA
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Research by the Fraunhofer Institute in Germany indicates that the photoelectric conversion efficiency of crystalline silicon solar cells is positively correlated with the resistivity of silicon wafers, which is determined by the doping concentration of N-type or P-type impurities. The theoretical efficiency limit of crystalline silicon solar cells (29.43% and above) is calculated based on silicon wafers with extremely low doping concentrations (≤1E+14/cm3). N-type BC cells use ultra-high resistivity N-type doped wafers or intrinsic undoped wafers, which align with the theoretical efficiency range for crystalline silicon cells. All N-type BC cells utilize silicon ingots and wafers with concentrated ultra-high resistivity, ensuring that the quality of the starting material meets cell preparation requirements and reducing the remaining crucible amount to around 10%. Accounting for these efficiency advantages, N-type BC cells offer a silicon cost advantage of 1.5 to 2 cents per watt over Topcon cells. The primary efficiency loss in high-efficiency solar cells comes from recombination in the metallization contact areas. Utilizing passivated contact structures minimizes this loss, a widely recognized strategy for achieving high efficiency. N-type BC cells employ passivated contacts across all metallized regions, in both the N and P areas, maximizing cell efficiency by preventing losses due to metallization. With metal electrodes positioned on the rear side, the front surface of N-type BC cells is free from any grid line obstruction, allowing for 100% light absorption and maximizing sunlight utilization.